-
E-mail
zhixuling789@126.com
-
Phone
18810401088
-
Address
Fengtai District
Product Categories
- Imported electron beam exposure system
- Inductively coupled plasma etching
- Reactive ion etching
- RAITH Maskless Laser Direct Writing Equipment
- High resolution deep ultraviolet lithography machine
- French JFP wire bonding machine
- Desktop electron microscope
- Laser direct writing equipment
- nanoindenter
- EKC270
- Chemical vapor deposition
Beijing Zhongke Fuhua Technology Co., Ltd
Germany SENTECH Inductively Coupled Chemical Vapor Deposition
NegotiableUpdate on 01/31
- Model
- Nature of the Manufacturer
- Producers
- Product Category
- Place of Origin
Overview
The SI 500D plasma deposition system is an ICP-PECVD equipment that uses an ICP high-density plasma source to deposit dielectric thin films. High quality SiO2, Si3N4, and SiOxNy thin films can be deposited at extremely low temperatures (<100 ° C). Continuous adjustment of deposited film thickness, refractive index, and stress can be achieved.
Product Details
High-density plasma
SI 500 D has excellent plasma properties, such as high density, low ion energy, and low-pressure plasma deposition of dielectric films.
Parallel plate ICP plasma source
SENTECH's parallel plate triple helix antenna (PTSA) ICP plasma source has been realizedLow power coupling.
Excellent sedimentation performance
The low etching rate, high breakdown voltage, low stress, non damaging substrate, and low interface state density at deposition temperatures below 100 ° C result in excellent performance of the deposited thin film.
Dynamic temperature control
The combination of dynamic temperature control and helium back cooled substrate electrodes, as well as substrate back temperature sensing, provides excellent stable process conditions over a wide temperature range from room temperature to+350 ° C.
The SI 500 D plasma deposition equipment represents the cutting-edge technology of plasma enhanced chemical vapor deposition, such as dielectric films, a-Si, SiC, and other materials. It is based on PTSA plasma source, independent reaction gas inlet, dynamic temperature control substrate electrode, fully automatic control vacuum system, SENTECH control software using remote fieldbus technology, and a user-friendly universal user interface for operating SI 500 D.
The SI 500 D plasma deposition equipment can process a variety of substrates, from chips with diameters up to 200 mm to parts loaded on carriers. The single-crystal pre vacuum chamber ensures stable process conditions and enables convenient switching between different processes.
The SI 500 D plasma enhanced deposition equipment is used to deposit SiO2, SiNx, SiONx, and a-Si thin films in a temperature range from room temperature to 350 ℃. Through liquid or gaseous precursors, SI 500 D can provide a solution for the deposition of TEOS, SiC, and other materials. SI 500 D is particularly suitable for depositing protective layers on organic materials at low temperatures and depositing passivation films without damage at a predetermined temperature.
SENTECH offers different levels of automation, from vacuum wafer loading to one process chamber or six process module ports, which can be used to form multi chamber systems with different etching and deposition process modules, with the goal of high flexibility or high yield. SI 500 D can also be used as a process module in multi cavity systems.
SI 500 D:
ICP-PECVD plasma deposition equipment
Equipped with a pre vacuum chamber
Applicable to200mm chip
The substrate temperature ranges from room temperature to 350 ° C
Laser endpoint detection
Alternative electrode bias
