SENTECH Chemical Vapor Deposition (Pre Vacuum Chamber), Germany

Process flexibility

The PECVD deposition equipment SI 500 PPD facilitates standard chemical vapor deposition processes for SiO2, SiNx, SiOxNy, and a-Si within a temperature range from room temperature to 350 ℃.

Pre vacuum chamber

The feature of SI 500 PPD is the pre vacuum chamber and dry pump device, used for oil-free, high-yield, and clean chemical vapor deposition processes.

SENTECH control software

Powerful user-friendly software including simulated graphical user interface, parameter window, processprescriptionEditing windows, data recording, and user management.

SI 500 PPD represents a plasma enhanced chemical vapor deposition equipment used for the deposition of dielectric films, amorphous silicon, silicon carbide, and other materials. It is based on a flat capacitive coupled plasma source, pre vacuum chamber, temperature controlled substrate electrode, optional low-frequency RF source, fully automatic oil-free vacuum system, SENTECH control software, remote fieldbus technology, and user-friendly universal interface to operate SI 500 PPD.

SI 500 PPD plasma deposition equipment, capable of processing frombigTransfer chips with a diameter of 200 millimeters to the parts loaded on the wafer carrier. Single crystal pre vacuum chamber ensures stable process conditions and facilitates easy switching process.

The SI 500 PPD plasma enhanced deposition equipment is used to deposit SiO2, SiNx, SiONx, and a-Si thin films in a temperature range from room temperature to 350 ℃. Through liquid or gaseous precursors, SI 500 PPD can provide a solution for the deposition of TEOS, SiC, and other materials. SI 500 PPD is particularly suitable for chemical vapor deposition for etching masks, passivation films, waveguides, and other dielectric films and amorphous silicon.

SENTECH offers different levels of automation, from vacuum cassette loading to a process chamber ortoSix additional process module ports can be used to form a multi cavity system with different etching and deposition process modules, with the goal of high flexibility or high yield. SI 500 PPD can also be used as a process module in multi chamber deposition systems.

SI 500 PPD:

• Plasma chemical vapor deposition equipment

• Equipped with a pre vacuum chamber

• Suitable for chips up to 200mm in size

• The substrate temperature ranges from room temperature to 350 ° C

• Optional low-frequency radio frequency to reduce stress

• Liquid precursor for depositing TEOS

• Dry pump unit