SENTECH ICP-RIE plasma etching machine from Germany

Low damage etching

Due to the low ion energy and narrow band of ion energy distribution, it is possible toUse meOur plasma etching machine SI 500 is used forLow damage etching and etching of nanostructures.

High-speed etching

For high-speed silicon-based MEMS etching with high aspect ratios, smooth sidewalls can be easily achieved through gas switching processes at room temperature or low-temperature processes.

Independently developed ICP plasma source

The triple helix parallel plate antenna (PTSA) plasma source is a property of SENTECH plasma process equipment. PTSA sources can generate uniform plasmas with high ion density and low ion energy. It has high coupling efficiency and excellent lighting performance, making it very suitable for processing various materials and structures.

Dynamic temperature control

The setting and stability of substrate temperature play a crucial role in achieving high-quality etching during plasma etching. The ICP substrate electrode with dynamic temperature control combined with helium back cooling and substrate back temperature sensing provides excellent process conditions in a wide temperature range of -150 ° C to+400 ° C.

SI 500 provides inductively coupled plasma (ICP) process equipment for research and production. It is based on ICP plasma source PTSA, substrate electrode with dynamic temperature control, fully automated vacuum system, SETECH control software using remote fieldbus technology, and user-friendly universal interface for operating SI 500. Flexibility and modularity are the main design features of SI 500.

The SI 500 ICP plasma etching machine can be used to process a variety of substrates, from chips with diameters up to 200 mm to parts loaded on carriers. The single-crystal wafer pre vacuum chamber ensures stable process conditions and makes switching processes very easy.

The SI 500 ICP plasma etching machine can be configured to etch different materials, including but not limited to III-V compound semiconductors (GaAs, InP, GaN, InSb), dielectrics, quartz, glass, silicon and silicon compounds (SiC, SiGe), as well as metals.

SENTECH provides users with different levels of automation, from vacuum wafer loading to one process chamber to six process module ports, which can be used to form multi chamber systems with different etching and deposition process modules, with the goal of high flexibility or high yield. The SI 500 ICP plasma etching machine can also be used as a process module in multi cavity systems.

SI 500 :

• ICP plasma etching machine

• Equipped with a pre vacuum chamber

• Suitable for 200mm chips

• The substrate temperature ranges from -20 ° C to 300 ° C

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SI 500C:

• Isothermal ICP plasma etching machine

• Belt conveyor chamber and pre vacuum chamber

• The substrate temperature ranges from -150 ° C to 400 ° C

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• SI 500 RIE:

• RIE plasma etching machine

• Intelligent solution for backside helium cooling etching

• Capacitive coupled plasma source, upgradable to ICP plasma source PTSA

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SI 500 -300:

• ICP plasma etching machine

• Equipped with a pre vacuum chamber

• Suitable for 300mm chips