Post CMP cleaning equipment

NegotiableUpdate on 02/15

Model

Nature of the Manufacturer: Producers

Product Category

Place of Origin

Online Consult

Overview

Shengmei Shanghai's Post CMP equipment is used for cleaning after manufacturing high-quality substrate chemical mechanical polishing (CMP) processes, with two configurations: wet in dry out (WIDO) and dry in dry out (DIDO). The 6-inch and 8-inch configurations of the cleaning equipment are suitable for manufacturing silicon carbide (SiC) substrates; The 8-inch and 12 inch configurations are suitable for silicon wafer manufacturing.

Product Details

Post CMP cleaning equipment

main advantages

After the CMP step, it is necessary to perform a physical pre cleaning process using diluted chemicals at low temperatures to reduce the number of particles. Shengmei Shanghai's Post CMP cleaning equipment can meet these requirements and provide various configurations, including Shengmei Shanghai's independently developed Smart MegasonixTM advanced cleaning technology.

Features and specifications (Ultra C WPN (WIDO))

Online pre cleaning equipment:
Can achieve less than 15 remaining particles below 37 nanometers or below 28 nanometers
20-25 remaining particles
Metal pollution can be controlled within 1E+8 (atoms/square centimeter)
When configuring 4 chambers, the production capacity can reach 35 wafers per hour

Offline pre cleaning equipment:
Can achieve less than 15 remaining particles below 37 nanometers or below 28 nanometers
20-25 remaining particles
compact footprint

Features and specifications (Ultra C WPN (DIDO))

Can configure four loading ports

compact footprint

Can be configured with four or six chambers, respectively two soft brushes and two cleaning chambers or two soft brushes and four cleaning chambers

Can achieve less than 15 remaining particles below 37 nanometers or 20-25 remaining particles below 28 nanometers

The production capacity can reach 60 wafers per hour