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Shengmei Semiconductor Equipment (Shanghai) Co., Ltd
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Shengmei Semiconductor Equipment (Shanghai) Co., Ltd

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PECVD equipment

NegotiableUpdate on 02/15
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Overview
Shengmei Shanghai's plasma enhanced chemical vapor deposition (PECVD) equipment can be applied to the deposition processes of SiO2, SiNx, Carbon, and NDC thin films, and can be extended to the platform based single plate PEALD thin film deposition process in the future.
Product Details

PECVD equipment

  

main advantages

Equipped with a cavity design with independent intellectual property rights and a single cavity multi heating plate layout

Equipped with special gas distribution device and chuck design

The transformation of thin film stacking can provide better film uniformity, better film stress, and fewer particle characteristics

Balancing high production capacity requirements, each chamber is equipped with multiple heating plates

Flexible configuration of cavity quantity to meet different production capacity requirements

The independently developed control software can be flexibly configured to meet corresponding requirements

Design of vacuum robotic arm matching chamber with multiple heating plates wafer access rules

Process temperature compatible with various PECVD deposition film requirements ranging from 200C to 650C


Characteristics and specifications

Suitable for various thin film deposition requirements on 300mm wafers

The device adopts a single cavity modular design and has two configurations:
One type is a configurable one to three chamber module, suitable for depositing thin films while considering production capacity
One type is a configurable four to five chamber module, suitable for depositing thick films compatible with long arm vacuum robotic arms